Precipitation of lithium in irradiated semiconductors

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dc.contributor.author Huang, George C. en_US
dc.date.accessioned 2011-06-03T19:32:36Z
dc.date.available 2011-06-03T19:32:36Z
dc.date.created 1973 en_US
dc.date.issued 1973
dc.identifier LD2489.Z9 1973 .H83 en_US
dc.identifier.uri http://cardinalscholar.bsu.edu/handle/handle/182075
dc.description.abstract A simple model describing the precipitation of lithium on defects in fast neutron-irradiated elemental semiconductors is developed for the case where lithium is a minor n-type dopant. The theory of disordered regions like behavior indicates an exponential decay of lithium concentration in surrounding a disordered region. The decay time constant to the size of the space charge region, the concentration of disordered regions, and the diffusivity of lithium. The magnitude and variation of this time constant with temperature and defect concentration are examined for fast neutron-irradiated n-type germanium containing lithium. en_US
dc.format.extent iii, 30 leaves : ill. ; 28 cm. en_US
dc.source Virtual Press en_US
dc.title Precipitation of lithium in irradiated semiconductors en_US
dc.type Research paper (M.A.), 4 hrs. en_US
dc.description.degree Thesis (M.A.) en_US
dc.identifier.cardcat-url http://liblink.bsu.edu/catkey/837032 en_US


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  • Research Papers [5091]
    Research papers submitted to the Graduate School by Ball State University master's degree candidates in partial fulfillment of degree requirements.

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