| dc.contributor.author |
Huang, George C. |
en_US |
| dc.date.accessioned |
2011-06-03T19:32:36Z |
|
| dc.date.available |
2011-06-03T19:32:36Z |
|
| dc.date.created |
1973 |
en_US |
| dc.date.issued |
1973 |
|
| dc.identifier |
LD2489.Z9 1973 .H83 |
en_US |
| dc.identifier.uri |
http://cardinalscholar.bsu.edu/handle/handle/182075 |
|
| dc.description.abstract |
A simple model describing the precipitation of lithium on defects in fast neutron-irradiated elemental semiconductors is developed for the case where lithium is a minor n-type dopant. The theory of disordered regions like behavior indicates an exponential decay of lithium concentration in surrounding a disordered region. The decay time constant to the size of the space charge region, the concentration of disordered regions, and the diffusivity of lithium. The magnitude and variation of this time constant with temperature and defect concentration are examined for fast neutron-irradiated n-type germanium containing lithium. |
en_US |
| dc.format.extent |
iii, 30 leaves : ill. ; 28 cm. |
en_US |
| dc.source |
Virtual Press |
en_US |
| dc.title |
Precipitation of lithium in irradiated semiconductors |
en_US |
| dc.type |
Research paper (M.A.), 4 hrs. |
en_US |
| dc.description.degree |
Thesis (M.A.) |
en_US |
| dc.identifier.cardcat-url |
http://liblink.bsu.edu/catkey/837032 |
en_US |