Computation of conductance for ballistic nanostructures

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dc.contributor.advisor Cosby, Ronald M. en_US Martin, Shashi A. en_US 2011-06-03T19:36:41Z 2011-06-03T19:36:41Z 1994 en_US 1994
dc.identifier LD2489.Z78 1994 .M27 en_US
dc.description.abstract Future electronic devices having dimensions on the nanometer scale will rely on the resultant quantum effects for their operation. In this project, these quantum effects were investigated through the theoretical modeling and computer simulation of a confined twodimensional electron gas in a semiconductor heterostructure. Assuming hardwall boundaries and sharp geometrical features, the nanostructure conductance has been calculated by finding transverse eigenvalues and eigenfunctions, computing hopping integrals for a one-dimensional tight binding lattice, determining the Greens' propagators, and then finally evaluating the transmittance. From the transmittance, the conductance was determined.A structured and modular computer program in FORTRAN was developed to investigate the effects of geometrical modifications on the conductance of ballistic nanochannels. The program has been designed in such a way that the user need only supply the nanostructure specifications to an input data file. The program then uses this data file to perform the calculations. A separate, user-friendly program has been developed to form the data file. The program is such that additions and modifications can be easily made in the future.
dc.description.sponsorship Department of Physics and Astronomy
dc.format.extent xi, 78 leaves : ill. ; 28 cm. en_US
dc.source Virtual Press en_US
dc.subject.lcsh Nanostructures. en_US
dc.subject.lcsh Doped semiconductors. en_US
dc.subject.lcsh Semiconductors. en_US
dc.title Computation of conductance for ballistic nanostructures en_US Thesis (M.S.)
dc.identifier.cardcat-url en_US

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  • Master's Theses [5510]
    Master's theses submitted to the Graduate School by Ball State University master's degree candidates in partial fulfillment of degree requirements.

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