The drift mobility of injected minority carriers in P-type germanium

The Problem was to determine the drift mobility of minority carriers injected into a sample of P-type germanium.The drift mobility was one of the characteristics of a semiconductor material which had to be known in order to determine whether the material was suitable for use in a semiconductor device. It was determined by performing a laboratory experiment in which minority carriers were injected into the sample of P-type germanium to which an electric field was applied. The resulting data was utilized in calculating the drift mobility of the minority carriers.