An investigation of hole mobility and recombination in n-type germanium between the temperatures of 299.5 K and 343 K

Abstract

This thesis investigates the mobility and recombination of light injected electron holes as a function of temperature. In this study the n-type germanium samples were placed in potentials which varied from two to twenty-five volts and the temperature varied from just above room temperature to the point where the sample exhibited thermal runaway.In addition, this thesis contains a number of techniques which were developed to complete the general topic. The techniques were in the preparation of the germanium samples, the hole collection circuit, high intensity light sources of short duration, light pulse detectors, and temperature monitoring of a small sample.